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1 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com hi-reliability product WMF128K8-xxx5 128kx8 monolithic flash, smd 5962-96690 features n access times of 50*, 60, 70, 90, 120, 150ns n packaging ? 32 lead, hermetic ceramic, 0.400" soj (package 101) ? 32 pin, hermetic ceramic, 0.600" dip (package 300) ? 32 lead, flatpack (package 220) ? 32 lead, formed flatpack (package 221) ? 32 pin, rectangular ceramic leadless chip carrier (package 601) n 100,000 erase/program cycles minimum n sector erase architecture ? 8 equal size sectors of 16kbytes each ? any combination of sectors can be concurrently erased. also supports full chip erase pin configuration for WMF128K8-xxx5 a 0 - 16 address inputs i/o 0-7 data input/output cs chip select oe output enable we write enable v cc +5.0v power v ss ground pin description top view 32 dip 32 csoj 32 flatpack 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 nc a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 v ss v cc we nc a14 a13 a8 a9 a11 oe a10 cs i/o7 i/o6 i/o5 i/o4 i/o3 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 4321323130 14 15 16 17 18 19 20 a7 a6 a5 a4 a3 a2 a1 a0 i/o 0 i/o1 i/o2 v ss i/o3 i/o4 i/o5 i/o6 a14 a13 a8 a9 a11 oe a10 cs i/o7 a12 a15 a16 nc v cc we nc pin configuration for WMF128K8-xclx5 top view 32 clcc n organized as 128kx8 n commercial, industrial and military temperature ranges n 5 volt programming. 5v 10% supply. n low power cmos n embedded erase and program algorithms n ttl compatible inputs and cmos outputs n page program operation and internal program control time. note: for programming information refer to flash programming 1m5 application note. * the access time of 50ns is available in industrial and commercial temperature ranges only. june 2000 rev. 4
2 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com WMF128K8-xxx5 absolute maximum ratings (1) notes: 1. stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2. minimum dc voltage on input or i/o pins is -0.5v. during voltage transitions, inputs may overshoot v ss to -2.0 v for periods of up to 20ns. maximum dc voltage on output and i/o pins is v cc + 0.5v. during voltage transitions, outputs may overshoot to vcc + 2.0 v for periods of up to 20ns. 3. minimum dc input voltage on a 9 pin is -0.5v. during voltage transitions, a 9 may overshoot vss to -2v for periods of up to 20ns. maximum dc input voltage on a 9 is +13.5v which may overshoot to 14.0 v for periods up to 20ns. dc characteristics - cmos compatible (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter unit operating temperature -55 to +125 c supply voltage range (v cc ) -2.0 to +7.0 v signal voltage range (any pin except a9) (2) -2.0 to +7.0 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c data retention mil temp 10 years endurance (write/erase cycles) mil temp 10,000 min. cycles a 9 voltage for sector protect (v id ) (3) -2.0 to +14.0 v parameter symbol conditions min max unit input leakage current i li v cc = 5.5, v in = gnd to v cc 10 m a output leakage current i lo v cc = 5.5, v in = gnd to v cc 10 m a v cc active current for read (1) i cc1 cs = v il , oe = v ih 35 ma v cc active current for program i cc2 cs = v il , oe = v ih 50 ma or erase (2) v cc standby current i cc3 v cc = 5.5, cs = v ih , f = 5mhz 1.6 ma output low voltage v ol i ol = 8.0 ma, v cc = 4.5 0.45 v output high voltage v oh1 i oh = -2.5 ma, v cc = 4.5 0.85 x v cc v output high voltage v oh2 i oh = -100 m a, v cc = 4.5 v cc - 0.4 v low v cc lock out voltage v lko 3.2 v capacitance (t a = +25 c) parameter symbol conditions max unit address input capacitance c ad v i/o = 0 v, f = 1.0 mhz 15 pf output enable capacitance c oe v in = 0 v, f = 1.0 mhz 15 pf write enable capacitance c we v in = 0 v, f = 1.0 mhz 15 pf chip select capacitance c cs v in = 0 v, f = 1.0 mhz 15 pf data i/o capacitance c i/o v i/o = 0 v, f = 1.0 mhz 15 pf this parameter is guaranteed by design but not tested. recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.0 v cc + 0.3 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c operating temp. (ind.) t a -40 +85 c a 9 voltage for sector protect v id 11.5 12.5 v notes: 1. the i cc current listed includes both the dc operating current and the frequency dependent component (at 5 mhz). the frequency component typically is less than 2 ma/mhz, with oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress. 3. dc test conditions: v il = 0.3v, v ih = v cc - 0.3v ac test circuit ac test conditions i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 w . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. parameter typ unit input pulse levels v il = 0, v ih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v
3 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com WMF128K8-xxx5 ac characteristics C write/erase/program operations, we controlled (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -50 -60 -70 -90 -120 -150 unit min max min max min max min max min max min max write cycle time t avav t wc 50 60 70 90 120 150 ns chip select setup time t elwl t cs 000000ns write enable pulse width t wlwh t wp 25 30 35 45 50 50 ns address setup time t avwl t as 000000ns data setup time t dvwh t ds 25 30 30 45 50 50 ns data hold time t whdx t dh 000000ns address hold time t wlax t ah 40 45 45 45 50 50 ns chip select hold time t wheh t ch 000000ns write enable pulse width high t whwl t wph 20 20 20 20 20 20 ns duration of byte programming operation (min) t whwh1 14 14 14 14 14 14 m s sector erase time t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery time before write t ghwl 000000ns v cc setup time t vcs 50 50 50 50 50 50 m s chip programming time 12.5 12.5 12.5 12.5 12.5 12.5 sec output enable setup time t oes 000000ns output enable hold time (1) t oeh 10 10 10 10 10 10 ns 1. for toggle and data polling. parameter symbol -50 -60 -70 -90 -120 -150 unit min max min max min max min max min max min max read cycle time t avav t rc 50 60 70 90 120 150 ns address access time t avqv t acc 50 60 70 90 120 150 ns chip select access time t elqv t ce 50 60 70 90 120 150 ns oe to output valid t glqv t oe 25 30 35 40 50 55 ns chip select to output high z (1) t ehqz t df 20 20 20 25 30 35 ns oe high to output high z (1) t ghqz t df 20 20 20 25 30 35 ns output hold from address, cs or oe change, t axqx t oh 00 000 0ns whichever is first 1. guaranteed by design, not tested. ac characteristics C read only operations (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c)
4 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com ac characteristics C write/erase/program operations, cs controlled (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -50 -60 -70 -90 -120 -150 unit min max min max min max min max min max min max write cycle time t avav t wc 50 60 70 90 120 150 ns we setup time t wlel t ws 000000ns cs pulse width t eleh t cp 25 30 35 45 50 50 ns address setup time t avel t as 000000ns data setup time t dveh t ds 25 30 30 45 50 50 ns data hold time t ehdx t dh 000000ns address hold time t elax t ah 40 45 45 45 50 50 ns we hold from we high t ehwh t wh 000000ns cs pulse width high t ehel t cph 20 20 20 20 20 20 ns duration of programming operation t whwh1 14 14 14 14 14 14 m s duration of erase operation t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery before write t ghel 000000ns chip programming time 12.5 12.5 12.5 12.5 12.5 12.5 sec WMF128K8-xxx5
5 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com ac waveforms for read operations addresses cs oe we outputs high z addresses stable t oe t rc output valid t ce t acc t oh high z t df WMF128K8-xxx5
6 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com write/erase/program operation, we controlled notes : 1. pa is the address of the memory location to be programmed. 2. pd is the data to be programmed at byte address. 3. i/o 7 is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates last two bus cycles of four bus cycle sequence. addresses cs oe we data 5.0 v 5555h pa pa t wc t cs pd i/o 7 i/o out t ah t wph t dh t ds data polling t as t rc t wp a0h t oe t df t oh t ce t ghwl t whwh1 WMF128K8-xxx5
7 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com ac waveforms chip/sector erase operations notes: 1. sa is the sector address for sector erase. addresses cs oe we data v cc 5555h 2aaah 2aaah sa 5555h 5555h t wp t cs t vcs 10h/30h 55h 80h 55h aah aah t ah t as t ghwl t wph t dh t ds WMF128K8-xxx5
8 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com ac waveforms for data polling during embedded algorithm operations cs oe we t oe t oe t ce t ch t oh i/o 7 i/o 7 = valid data high z i/o 0-6 = invalid i/o 0-7 valid data t df i/o 7 i/o 0-6 t oeh t whwh 1 or 2 data WMF128K8-xxx5
9 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com write/erase/program operation, cs controlled notes: 1. pa represents the address of the memory location to be programmed. 2. pd represents the data to be programmed at byte address. 3. i/o 7 is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates the last two bus cycles of a four bus cycle sequence. addresses we oe cs data 5.0 v 5555h pa pa t wc t ws pd i/o 7 i/o out t ah t cph t cp t dh t ds data polling t as t ghel a0h t whwh1 WMF128K8-xxx5
10 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com all linear dimensions are millimeters and parenthetically in inches package 101: 32 lead, ceramic soj 1.27 (0.050) typ 21.1 (0.830) 0.25 (0.010) pin 1 identifier 19.1 (0.750) typ 11.3 (0.446) 0.2 (0.009) 3.96 (0.156) max 0.2 (0.008) 0.05 (0.002) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) 0.89 (0.035) radius typ package 220: 32 lead, ceramic flatpack all linear dimensions are millimeters and parenthetically in inches 10.41 (0.410) 0.13 (0.005) 2.60 (0.102) max 0.127 (0.005) + 0.05 (0.002) 0.025 (0.001) pin 1 identifier 1.27 (0.050) typ 19.05 (0.750) typ 10.16 (0.400) 0.51 (0.020) 0.43 (0.017) 0.05 (0.002) 20.83 (0.820) 0.25 (0.010) WMF128K8-xxx5
11 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com package 300: 32 pin, ceramic dip, single cavity side brazed 2.5 (0.100) typ 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.99 (0.039) 0.51 (0.020) 3.2 (0.125) min 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) 42.8 (1.686) max 5.13 (0.202) max pin 1 identifier all linear dimensions are millimeters and parenthetically in inches package 221: 32 lead, formed ceramic flatpack all linear dimensions are millimeters and parenthetically in inches 10.41 (0.410) 0.13 (0.005) 1.27 (0.050) typ 19.05 (0.750) typ 1.52 (0.060) typ 0.43 (0.017) 0.05 (0.002) 20.83 (0.820) 0.25 (0.010) 3.35 (0.132) max 1.27 (0.050) typ 0.15 (0.006) typ 0 / -4 0.63 (0.025) typ + + 13.47 (0.530) 0.13 (0.005) WMF128K8-xxx5
12 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com all linear dimensions are millimeters and parenthetically in inches package 601: 32 pin, rectangular ceramic leadless chip carrier 7.62 (0.300) typ 5.08 (0.200) typ 3.81 (0.150) typ 10.16 (0.400) typ 0.38 (0.015) x 45 pin 1 identifier 0.56 (0.022) 0.71 (0.028) 11.25 (0.443) 14.15 (0.457) 13.79 (0.543) 14.15 (0.557) 1.63 (0.064) 2.54 (0.100) pin 1 1.02 (0.040) x 45 3 places WMF128K8-xxx5
13 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com lead finish: blank = gold plated leads a = solder dip leads v pp programming voltage 5 = 5v device grade: q = mil-std-883 compliant m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 c to +70 c package type: de = 32 lead ceramic soj (package 101) c = 32 pin ceramic dip (package 300) fe = 32 lead ceramic flatpack (package 220) ff = 32 lead formed ceramic flatpack (package 221) cl = 32 pin rectangular ceramic leadless chip carrier (package 601) access time (ns) organization, 128k x 8 flash monolithic white electronic designs corp. ordering information w m f 128k8 - xxx x x 5 x WMF128K8-xxx5
14 white electronic designs corporation ? (602) 437-1520 ? www.whiteedc.com device type sector size speed package smd no. 128k x 8 flash monolithic 16kbyte 150ns 32 pin dip (c) 5962-96690 01hyx 128k x 8 flash monolithic 16kbyte 120ns 32 pin dip (c) 5962-96690 02hyx 128k x 8 flash monolithic 16kbyte 90ns 32 pin dip (c) 5962-96690 03hyx 128k x 8 flash monolithic 16kbyte 70ns 32 pin dip (c) 5962-96690 04hyx 128k x 8 flash monolithic 16kbyte 60ns 32 pin dip (c) 5962-96690 05hyx 128k x 8 flash monolithic 16kbyte 150ns 32 lead soj (de) 5962-96690 01hxx 128k x 8 flash monolithic 16kbyte 120ns 32 lead soj (de) 5962-96690 02hxx 128k x 8 flash monolithic 16kbyte 90ns 32 lead soj (de) 5962-96690 03hxx 128k x 8 flash monolithic 16kbyte 70ns 32 lead soj (de) 5962-96690 04hxx 128k x 8 flash monolithic 16kbyte 60ns 32 lead soj (de) 5962-96690 05hxx 128k x 8 flash monolithic 16kbyte 150ns 32 lead flatpack (fe) 5962-96690 01htx 128k x 8 flash monolithic 16kbyte 120ns 32 lead flatpack (fe) 5962-96690 02htx 128k x 8 flash monolithic 16kbyte 90ns 32 lead flatpack (fe) 5962-96690 03htx 128k x 8 flash monolithic 16kbyte 70ns 32 lead flatpack (fe) 5962-96690 04htx 128k x 8 flash monolithic 16kbyte 60ns 32 lead flatpack (fe) 5962-96690 05htx 128k x 8 flash monolithic 16kbyte 150ns 32 lead formed flatpack (ff) 5962-96690 01hux 128k x 8 flash monolithic 16kbyte 120ns 32 lead formed flatpack (ff) 5962-96690 02hux 128k x 8 flash monolithic 16kbyte 90ns 32 lead formed flatpack (ff) 5962-96690 03hux 128k x 8 flash monolithic 16kbyte 70ns 32 lead formed flatpack (ff) 5962-96690 04hux 128k x 8 flash monolithic 16kbyte 60ns 32 lead formed flatpack (ff) 5962-96690 05hux WMF128K8-xxx5

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